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Samsung M395T2863QZ4-CF76 1GB
Samsung M471A1K43DB1-CWE 8GB

Samsung M395T2863QZ4-CF76 1GB vs Samsung M471A1K43DB1-CWE 8GB

总分
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分
star star star star star
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

差异 规格 评论

差异

Samsung M395T2863QZ4-CF76 1GB 需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,404.5 left arrow 13.0
    测试中的平均数值
Samsung M471A1K43DB1-CWE 8GB 需要考虑的原因
Samsung M471A1K43DB1-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 104
    左右 -215% 更低的延时
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Samsung M471A1K43DB1-CWE 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    104 left arrow 33
  • 读取速度，GB/s
    3,192.0 left arrow 16.1
  • 写入速度，GB/s
    2,404.5 left arrow 13.0
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    no data left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    786 left arrow 2987

Samsung M395T2863QZ4-CF76 1GB RAM的比较

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

Samsung M471A1K43DB1-CWE 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
内存RAM
Kingston 9905474-019.A00LF 2GB
Kingston 9905474-019.A00LF 2GB
Ramaxel Technology RMUA5200ME78HAF-3200 8GB
Ramaxel Technology RMUA5200ME78HAF-3200 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Kingston 9905625-062.A00G 8GB
Kingston 9905625-062.A00G 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Ramaxel Technology RMSA3340MB88HBF-3200 16GB
Ramaxel Technology RMSA3340MB88HBF-3200 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Apacer Technology GD2.1831WS.002 16GB
Apacer Technology GD2.1831WS.002 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Smart Modular SF4721G8CKHH6DFSDS 8GB
Smart Modular SF4721G8CKHH6DFSDS 8GB
内存RAM
Kingston ACR16D3LU1KNG/8G 8GB
Kingston ACR16D3LU1KNG/8G 8GB
AMD R538G1601U2S-UGO 8GB
AMD R538G1601U2S-UGO 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avant Technology W641GU42J7240NB 8GB
Avant Technology W641GU42J7240NB 8GB
内存RAM
Kingston KVR26N19D8/16 16GB
Kingston KVR26N19D8/16 16GB
Kingston 9905701-017.A00G 16GB
Kingston 9905701-017.A00G 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Kingston 99U5700-032.A00G 16GB
Kingston 99U5700-032.A00G 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston KHX3200C18D4/4G 4GB
Kingston KHX3200C18D4/4G 4GB
内存RAM