Samsung M395T2863QZ4-CF76 1GB vs Samsung M471A2K43BB1-CRC 16GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 14.2

测试中的平均数值

Samsung M471A2K43BB1-CRC 16GB

需要考虑的原因
Samsung M471A2K43BB1-CRC 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 104

左右 -174% 更低的延时
更快的写入速度，GB/s

9.5 2,404.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Samsung M471A2K43BB1-CRC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 38
读取速度，GB/s

3,192.0 14.2
写入速度，GB/s

2,404.5 9.5
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 2470

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSX16GX4M1A2666C18 16GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Crucial Technology BLS16G4S26BFSD.16FBD 16GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Team Group Inc. TEAMGROUP-UD4-3733 8GB

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Samsung M378B5673EH1-CF8 2GB

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Micron Technology 36ASF4G72LZ-2G3B1 32GB

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Samsung M378A1K43EB2-CWE 8GB

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SK Hynix HMA41GS6AFR8N-TF 8GB

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Kingston KHX1600C9S3L/4G 4GB

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Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

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Kingston KHX2666C16/8G 8GB

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Samsung M393B5270CH0-CH9 4GB

Crucial Technology BLE16G4D32AEEA.K16FB 16GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Kingston CAC24D4S7D8MB-16 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CMK8GX4M1A2666C16 8GB

Corsair CMK8GX4M1A2666C16 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Kingston 9905700-025.A00G 8GB

Kingston 9905700-025.A00G 8GB