Samsung M395T2863QZ4-CF76 1GB vs SK Hynix HMA82GR7AFR8N-UH 16GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

SK Hynix HMA82GR7AFR8N-UH 16GB

SK Hynix HMA82GR7AFR8N-UH 16GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

SK Hynix HMA82GR7AFR8N-UH 16GB

需要考虑的原因
SK Hynix HMA82GR7AFR8N-UH 16GB

报告一个错误

低于PassMark测试中的延时，ns

60 104

左右 -73% 更低的延时
更快的读取速度，GB/s

9.2 3

测试中的平均数值
更快的写入速度，GB/s

7.1 2,404.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

SK Hynix HMA82GR7AFR8N-UH 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 60
读取速度，GB/s

3,192.0 9.2
写入速度，GB/s

2,404.5 7.1
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 2136

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Memphis Electronic D4SO1G724GI-A58SD 8GB

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Maxsun MSD48G30Q3 8GB

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Asgard VMA45UG-MEC1U2AW1 8GB

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Kingston 9905403-515.A00LF 8GB

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Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB