Samsung M395T5160QZ4-CE66 2GB vs Patriot Memory (PDP Systems) 2800 C16 Series 8GB

总分

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

总分

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

差异规格评论

差异

Samsung M395T5160QZ4-CE66 2GB

需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB

报告一个错误

更快的读取速度，GB/s

2 16.5

测试中的平均数值
更快的写入速度，GB/s

2,072.7 11.4

测试中的平均数值

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 2800 C16 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 75

左右 -127% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M395T5160QZ4-CE66 2GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 33
读取速度，GB/s

2,730.3 16.5
写入速度，GB/s

2,072.7 11.4
内存带宽，mbps

5300 17000

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 2913

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX3200C18D4/4G 4GB

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Apacer Technology 78.D1GMM.AU10B 16GB

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PNY Electronics PNY 2GB

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Samsung M3 78T2953EZ3-CF7 1GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

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AMD AE34G1601U1 4GB

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Apacer Technology GD2.1129WH.001 16GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Samsung M378A2G43AB3-CWE 16GB

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Kingston 9965525-144.A00LF 8GB

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SK Hynix V-GeN D4H4GL26A8TL5 4GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Corsair CMK128GX4M4E3200C16 32GB

Corsair CMK128GX4M4E3200C16 32GB