Samsung M4 70T2953EZ3-CE6 1GB vs Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 18.6

测试中的平均数值

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

需要考虑的原因
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 73

左右 -232% 更低的延时
更快的写入速度，GB/s

14.9 1,423.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 22
读取速度，GB/s

3,510.5 18.6
写入速度，GB/s

1,423.3 14.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

476 3361

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Samsung M378A2K43DB1-CTD 16GB

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Samsung M378B5673EH1-CF8 2GB

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SK Hynix HMA81GU6JJR8N-VK 8GB

SK Hynix HMA81GU6JJR8N-VK 8GB

AMD R748G2606U2S 8GB

AMD R748G2606U2S 8GB

AMD R748G2606U2S 8GB

AMD R748G2606U2S 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMD128GX4M8B3000C16 16GB

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Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

G Skill Intl F4-4400C18-8GTRS 8GB

G Skill Intl F4-4400C18-8GTRS 8GB

Kingston KF560C40-16 16GB

Kingston KF560C40-16 16GB

Corsair CMK16GX4M4A2133C13 4GB

Corsair CMK16GX4M4A2133C13 4GB