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Samsung M4 70T5663CZ3-CE6 2GB
A-DATA Technology AM1P26KC4U1-BACS 4GB

Samsung M4 70T5663CZ3-CE6 2GB vs A-DATA Technology AM1P26KC4U1-BACS 4GB

总分
star star star star star
Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分
star star star star star
A-DATA Technology AM1P26KC4U1-BACS 4GB

A-DATA Technology AM1P26KC4U1-BACS 4GB

差异 规格 评论

差异

Samsung M4 70T5663CZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 12.8
    测试中的平均数值
A-DATA Technology AM1P26KC4U1-BACS 4GB 需要考虑的原因
A-DATA Technology AM1P26KC4U1-BACS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 69
    左右 -77% 更低的延时
  • 更快的写入速度，GB/s
    11.6 left arrow 1,441.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 39
  • 读取速度，GB/s
    3,325.1 left arrow 12.8
  • 写入速度，GB/s
    1,441.2 left arrow 11.6
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    525 left arrow 2089

Samsung M4 70T5663CZ3-CE6 2GB RAM的比较

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

A-DATA Technology AM1P26KC4U1-BACS 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
G Skill Intl F4-3200C16-16GVK 16GB
G Skill Intl F4-3200C16-16GVK 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3600C14-16GTZRA 16GB
G Skill Intl F4-3600C14-16GTZRA 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-2933C16-16GTZRX 16GB
G Skill Intl F4-2933C16-16GTZRX 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston XW21KG-MIE-NX 8GB
Kingston XW21KG-MIE-NX 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston HP26D4U9S8ME-8X 8GB
Kingston HP26D4U9S8ME-8X 8GB
内存RAM
Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston HX426C16FB2/8-SP 8GB
Kingston HX426C16FB2/8-SP 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Corsair CMD16GX4M2B2800C14 8GB
Corsair CMD16GX4M2B2800C14 8GB
内存RAM
SK Hynix GKE800UD102408-2400 8GB
SK Hynix GKE800UD102408-2400 8GB
Ramaxel Technology RMSA3230KB78HAF2133 8GB
Ramaxel Technology RMSA3230KB78HAF2133 8GB
内存RAM
Kingston 9905469-124.A00LF 4GB
Kingston 9905469-124.A00LF 4GB
Apacer Technology 78.C1GMM.DFW0C 8GB
Apacer Technology 78.C1GMM.DFW0C 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Apacer Technology 78.CAGPL.ARC0B 8GB
Apacer Technology 78.CAGPL.ARC0B 8GB
内存RAM