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Samsung M471B5173QH0-YK0 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
比较
Samsung M471B5173QH0-YK0 4GB vs Patriot Memory (PDP Systems) 2666 C15 Series 4GB
总分
Samsung M471B5173QH0-YK0 4GB
总分
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
需要考虑的原因
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
报告一个错误
低于PassMark测试中的延时,ns
31
45
左右 -45% 更低的延时
更快的读取速度,GB/s
16.3
12.3
测试中的平均数值
更快的写入速度,GB/s
12.8
8.0
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
31
读取速度,GB/s
12.3
16.3
写入速度,GB/s
8.0
12.8
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1992
3084
Samsung M471B5173QH0-YK0 4GB RAM的比较
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5173QH0-YK0 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Corsair CMD8GX3M2A2933C12 4GB
G Skill Intl F4-3000C16-16GVRB 16GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3600C17-16GTZR 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Gloway International (HK) STK2133C15-8GB 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Mushkin MR[A/B]4U266GHHF16G 16GB
takeMS International AG TMS2GB264D083805EV 2GB
Maxsun MSD44G24Q3 4GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Roa Logic BV iGame DDR4 8G 3000 8GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
G Skill Intl F4-4000C17-16GTZRB 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2133C15-4GRB 4GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMSO2GX3M1A1333C9 2GB
Essencore Limited KD48GU88C-26N1600 8GB
Tanbassh 8G 2666MHZ 8GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
报告一个错误
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Bug description
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