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Samsung M471A1A43CB1-CRC 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Samsung M471A1A43CB1-CRC 8GB vs Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

总分
star star star star star
Samsung M471A1A43CB1-CRC 8GB

Samsung M471A1A43CB1-CRC 8GB

总分
star star star star star
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

差异 规格 评论

差异

Samsung M471A1A43CB1-CRC 8GB 需要考虑的原因
Samsung M471A1A43CB1-CRC 8GB
报告一个错误
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB 需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 27
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    14.3 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 5.4
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A1A43CB1-CRC 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 25
  • 读取速度，GB/s
    11.2 left arrow 14.3
  • 写入速度，GB/s
    5.4 left arrow 10.7
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1774 left arrow 2583

Samsung M471A1A43CB1-CRC 8GB RAM的比较

Crucial Technology CT51264BD1339.M16F 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G32C16U4B.16FE 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M471A1A43CB1-CRC 8GB
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Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
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Corsair CM4B16G1J2400A16K2-O 16GB
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Kingmax Semiconductor GSJF62F-DA---------- 4GB
内存RAM
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Crucial Technology BLS8G4D240FSA.16FAD 8GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
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内存RAM
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内存RAM
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A-DATA Technology AO1P21FC8T1-BSKS 8GB
内存RAM
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