RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A1K43EB1-CWE 8GB
Transcend Information TS1GSH64V1H 8GB
比较
Samsung M471A1K43EB1-CWE 8GB vs Transcend Information TS1GSH64V1H 8GB
总分
Samsung M471A1K43EB1-CWE 8GB
总分
Transcend Information TS1GSH64V1H 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471A1K43EB1-CWE 8GB
报告一个错误
更快的读取速度,GB/s
16
14.2
测试中的平均数值
更快的写入速度,GB/s
12.4
9.8
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
Transcend Information TS1GSH64V1H 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
46
左右 -70% 更低的延时
规格
完整的技术规格清单
Samsung M471A1K43EB1-CWE 8GB
Transcend Information TS1GSH64V1H 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
46
27
读取速度,GB/s
16.0
14.2
写入速度,GB/s
12.4
9.8
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2660
2330
Samsung M471A1K43EB1-CWE 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Transcend Information TS1GSH64V1H 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
Samsung M471A1K43EB1-CWE 8GB
Transcend Information TS1GSH64V1H 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Kingston HP32D4U8S8HC-8XR 8GB
Kingston 9905625-142.A00G 16GB
Apacer Technology 78.01GA0.9K5 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
A-DATA Technology VDQVE1B16 2GB
Samsung M378A2K43CB1-CRC 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3200C14-16GTZKW 16GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-3300C16-4GRRD 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M393A5143DB0-CRC 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
报告一个错误
×
Bug description
Source link