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Samsung M471A5143SB1-CRC 4GB
Shenzhen Xingmem Technology Corp 16GB

Samsung M471A5143SB1-CRC 4GB vs Shenzhen Xingmem Technology Corp 16GB

总分
star star star star star
Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

总分
star star star star star
Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

差异 规格 评论

差异

Samsung M471A5143SB1-CRC 4GB 需要考虑的原因
Samsung M471A5143SB1-CRC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 43
    左右 44% 更低的延时
  • 更快的读取速度，GB/s
    14.9 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 7.8
    测试中的平均数值
Shenzhen Xingmem Technology Corp 16GB 需要考虑的原因
Shenzhen Xingmem Technology Corp 16GB
报告一个错误

规格

完整的技术规格清单
Samsung M471A5143SB1-CRC 4GB
Shenzhen Xingmem Technology Corp 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 43
  • 读取速度，GB/s
    14.9 left arrow 14.3
  • 写入速度，GB/s
    10.6 left arrow 7.8
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2196 left arrow 2128

Samsung M471A5143SB1-CRC 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Shenzhen Xingmem Technology Corp 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Micron Technology ILG8GS2400A 8GB
Micron Technology ILG8GS2400A 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3733C17-8GTZKW 8GB
G Skill Intl F4-3733C17-8GTZKW 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
内存RAM
Samsung M378B1G73EB0-CK0 8GB
Samsung M378B1G73EB0-CK0 8GB
Corsair CMK16GX4M4B3866C18 4GB
Corsair CMK16GX4M4B3866C18 4GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Corsair CM4X32GE2666C18S2 32GB
Corsair CM4X32GE2666C18S2 32GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston KP6FH5-MIE 32GB
Kingston KP6FH5-MIE 32GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Samsung M393A8K40B21-CTC 64GB
Samsung M393A8K40B21-CTC 64GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Panram International Corporation D4N2666PS-16G 16GB
Panram International Corporation D4N2666PS-16G 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C16-8GTZN 8GB
G Skill Intl F4-3200C16-8GTZN 8GB
内存RAM