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Samsung M471A5244CB0-CWE 4GB
AMD R7S44G2606U1S 4GB

Samsung M471A5244CB0-CWE 4GB vs AMD R7S44G2606U1S 4GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
AMD R7S44G2606U1S 4GB

AMD R7S44G2606U1S 4GB

差异 规格 评论

差异

Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
AMD R7S44G2606U1S 4GB 需要考虑的原因
AMD R7S44G2606U1S 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 38
    左右 -90% 更低的延时
  • 更快的读取速度，GB/s
    18.9 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
AMD R7S44G2606U1S 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 20
  • 读取速度，GB/s
    15.5 left arrow 18.9
  • 写入速度，GB/s
    12.0 left arrow 14.3
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2283 left arrow 2707

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

AMD R7S44G2606U1S 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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Samsung M471A5244CB0-CWE 4GB
AMD R7S44G2606U1S 4GB
AMD R7S44G2606U1S 4GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
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Kingston KHX2133C14S4/8G 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
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Kingston KWTHG4-MIE 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
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Corsair CMK16GX4M4A2133C13 4GB
内存RAM
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Kingston 9965516-112.A00LF 16GB
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Essencore Limited KD48GU881-26N190D 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
内存RAM