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Samsung M471B1G73DB0-YK0 8GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

Samsung M471B1G73DB0-YK0 8GB vs A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

总分
star star star star star
Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分
star star star star star
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

差异 规格 评论

差异

Samsung M471B1G73DB0-YK0 8GB 需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB
报告一个错误
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB 需要考虑的原因
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.7 left arrow 11.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.1 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73DB0-YK0 8GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 45
  • 读取速度，GB/s
    11.9 left arrow 14.7
  • 写入速度，GB/s
    8.1 left arrow 11.1
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2077 left arrow 2556

Samsung M471B1G73DB0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Kingston KTP9W1-MID 16GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB RAM的比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9965589-024.D01G 16GB
Kingston 9965589-024.D01G 16GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston 9905734-102.A00G 32GB
Kingston 9905734-102.A00G 32GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
Mushkin 99[2/7/4]200[F/T] 8GB
Mushkin 99[2/7/4]200[F/T] 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Kingston 9905702-017.A00G 8GB
Kingston 9905702-017.A00G 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Mushkin 99[2/7/4]204F 4GB
Mushkin 99[2/7/4]204F 4GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Crucial Technology CT8G4SFS824A.C8FDD1 8GB
Crucial Technology CT8G4SFS824A.C8FDD1 8GB
内存RAM
Elpida EBJ40UG8BBU0-GN-F 4GB
Elpida EBJ40UG8BBU0-GN-F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Kingston 9905622-057.A00G 4GB
Kingston 9905622-057.A00G 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2933C14-8GTZRX 8GB
G Skill Intl F4-2933C14-8GTZRX 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMD32GX4M4B3466C16 8GB
Corsair CMD32GX4M4B3466C16 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9905701-017.A00G 16GB
Kingston 9905701-017.A00G 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
内存RAM