Samsung M471B5173CB0-YK0 4GB vs SK Hynix HMT351S6BFR8C-H9 4GB

总分

Samsung M471B5173CB0-YK0 4GB

Samsung M471B5173CB0-YK0 4GB

总分

SK Hynix HMT351S6BFR8C-H9 4GB

SK Hynix HMT351S6BFR8C-H9 4GB

差异规格评论

差异

Samsung M471B5173CB0-YK0 4GB

需要考虑的原因
Samsung M471B5173CB0-YK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 49

左右 14% 更低的延时
更快的读取速度，GB/s

11.9 8.2

测试中的平均数值
更快的写入速度，GB/s

7.9 5.2

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

SK Hynix HMT351S6BFR8C-H9 4GB

需要考虑的原因
SK Hynix HMT351S6BFR8C-H9 4GB

报告一个错误

规格

完整的技术规格清单

Samsung M471B5173CB0-YK0 4GB

SK Hynix HMT351S6BFR8C-H9 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

42 49
读取速度，GB/s

11.9 8.2
写入速度，GB/s

7.9 5.2
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1979 1223

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.B1GET.AU00C 4GB

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Crucial Technology BLS8G4D26BFSE.16FB 8GB

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Kingston KHX2400C14D4/16G 16GB

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Golden Empire CL18-22-22 D4-3600 16GB

Golden Empire CL18-22-22 D4-3600 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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SK Hynix GKE800UD102408-2133 8GB

SK Hynix GKE800UD102408-2133 8GB