Samsung M471B5173EB0-YK0 4GB vs Crucial Technology CT8G4DFS8266.C8FN 8GB

总分

Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

总分

Crucial Technology CT8G4DFS8266.C8FN 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

差异规格评论

差异

Samsung M471B5173EB0-YK0 4GB

需要考虑的原因
Samsung M471B5173EB0-YK0 4GB

报告一个错误

Crucial Technology CT8G4DFS8266.C8FN 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8266.C8FN 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 44

左右 -33% 更低的延时
更快的读取速度，GB/s

16.4 13

测试中的平均数值
更快的写入速度，GB/s

11.3 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173EB0-YK0 4GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 33
读取速度，GB/s

13.0 16.4
写入速度，GB/s

8.2 11.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2069 2919

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

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Avant Technology J642GU42J5213N2 16GB

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Samsung M471B5173EB0-YK0 4GB

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Crucial Technology CT8G4DFS8266.C8FN 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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G Skill Intl F4-3300C16-8GTZSW 8GB

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Kingston 99U5428-063.A00LF 8GB

Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Smart Modular SF4641G8CKHIWDFSEG 8GB

Smart Modular SF4641G8CKHIWDFSEG 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

G Skill Intl F4-2400C15-8GRR 8GB

G Skill Intl F4-2400C15-8GRR 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 9HTF6472FY-667B4D3 512MB

Micron Technology 9HTF6472FY-667B4D3 512MB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Apacer Technology 78.D1GS7.B7B0B 16GB

Apacer Technology 78.D1GS7.B7B0B 16GB