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Samsung M471B5173EB0-YK0 4GB
G Skill Intl F4-2400C15-16GFXR 16GB

Samsung M471B5173EB0-YK0 4GB vs G Skill Intl F4-2400C15-16GFXR 16GB

总分
star star star star star
Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

总分
star star star star star
G Skill Intl F4-2400C15-16GFXR 16GB

G Skill Intl F4-2400C15-16GFXR 16GB

差异 规格 评论

差异

Samsung M471B5173EB0-YK0 4GB 需要考虑的原因
Samsung M471B5173EB0-YK0 4GB
报告一个错误
G Skill Intl F4-2400C15-16GFXR 16GB 需要考虑的原因
G Skill Intl F4-2400C15-16GFXR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 44
    左右 -100% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 13
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173EB0-YK0 4GB
G Skill Intl F4-2400C15-16GFXR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 22
  • 读取速度，GB/s
    13.0 left arrow 18.4
  • 写入速度，GB/s
    8.2 left arrow 13.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 14 15
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2069 left arrow 3286

Samsung M471B5173EB0-YK0 4GB RAM的比较

SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB

G Skill Intl F4-2400C15-16GFXR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
G Skill Intl F4-2400C15-16GFXR 16GB
G Skill Intl F4-2400C15-16GFXR 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMK32GX4M2K3600C16 16GB
Corsair CMK32GX4M2K3600C16 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3200C15-16GVR 16GB
G Skill Intl F4-3200C15-16GVR 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Corsair CMW64GX4M4C3200C16 16GB
Corsair CMW64GX4M4C3200C16 16GB
内存RAM
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Crucial Technology CT16G4SFS8266.C8FB 16GB
Crucial Technology CT16G4SFS8266.C8FB 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Apacer Technology 78.C1GMM.BAC0B 8GB
Apacer Technology 78.C1GMM.BAC0B 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
内存RAM
SK Hynix HMT31GR7BFR4C-H9 8GB
SK Hynix HMT31GR7BFR4C-H9 8GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
内存RAM