Samsung M471B5173QH0-YK0 4GB vs Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 45

左右 -96% 更低的延时
更快的读取速度，GB/s

16.3 12.3

测试中的平均数值
更快的写入速度，GB/s

10.8 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 23
读取速度，GB/s

12.3 16.3
写入速度，GB/s

8.0 10.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1992 2763

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Kingston MSI24D4D4S8MB-8 8GB

Kingston MSI24D4D4S8MB-8 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Avant Technology W6451U48J7240N6 4GB

Avant Technology W6451U48J7240N6 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Corsair CM4X16GE2400C14K4 16GB

Corsair CM4X16GE2400C14K4 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

A-DATA Technology AD4S320038G22-B 8GB

A-DATA Technology AD4S320038G22-B 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

SK Hynix HMA81GS6CJR8N-UH 8GB

SK Hynix HMA81GS6CJR8N-UH 8GB

Apacer Technology 75.A73AA.G03 2GB

Apacer Technology 75.A73AA.G03 2GB

Patriot Memory (PDP Systems) PSD416G26662 16GB

Patriot Memory (PDP Systems) PSD416G26662 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Kingston 9965669-031.A00G 16GB

Kingston 9965669-031.A00G 16GB

Kingmax Semiconductor FLFF65F-C8KM9 4GB

Kingmax Semiconductor FLFF65F-C8KM9 4GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Essencore Limited KD4AGS88C-32N220D 16GB

Essencore Limited KD4AGS88C-32N220D 16GB