Samsung M471B5173QH0-YK0 4GB vs Crucial Technology CT32G4DFD832A.M16FB 32GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Crucial Technology CT32G4DFD832A.M16FB 32GB

Crucial Technology CT32G4DFD832A.M16FB 32GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Crucial Technology CT32G4DFD832A.M16FB 32GB

需要考虑的原因
Crucial Technology CT32G4DFD832A.M16FB 32GB

报告一个错误

低于PassMark测试中的延时，ns

31 45

左右 -45% 更低的延时
更快的读取速度，GB/s

17.8 12.3

测试中的平均数值
更快的写入速度，GB/s

15.7 8.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Crucial Technology CT32G4DFD832A.M16FB 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 31
读取速度，GB/s

12.3 17.8
写入速度，GB/s

8.0 15.7
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1992 3699

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston MSI16D3LS1MNG/8G 8GB

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Corsair CMK32GX4M2D3600C18 16GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

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Corsair CMR64GX4M4A2666C16 16GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Corsair CMSX32GX4M2A3000C18 16GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

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Corsair CMT64GX4M4C3000C15 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung M391A1K43BB1-CRC 8GB

Samsung M391A1K43BB1-CRC 8GB