Samsung M471B5173QH0-YK0 4GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

需要考虑的原因
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 45

左右 -22% 更低的延时
更快的读取速度，GB/s

16 12.3

测试中的平均数值
更快的写入速度，GB/s

12.6 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 37
读取速度，GB/s

12.3 16.0
写入速度，GB/s

8.0 12.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1992 2808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMW16GX4M2C3600C18 8GB

Corsair CMW16GX4M2C3600C18 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Corsair CMK128GX4M8B3200C16 16GB

Corsair CMK128GX4M8B3200C16 16GB

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

G Skill Intl F4-3000C16-16GTRS 16GB

G Skill Intl F4-3000C16-16GTRS 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Wilk Elektronik S.A. IR2400D464L17/16G 16GB

Wilk Elektronik S.A. IR2400D464L17/16G 16GB

Crucial Technology CT102464BF186D.M16 8GB

Crucial Technology CT102464BF186D.M16 8GB

Micron Technology 16KTF1G64HZ-1G9P1 8GB

Micron Technology 16KTF1G64HZ-1G9P1 8GB

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

Apacer Technology 78.C1GMS.C7Z0C 8GB

Apacer Technology 78.C1GMS.C7Z0C 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Patriot Memory (PDP Systems) PSD44G240082 4GB

Patriot Memory (PDP Systems) PSD44G240082 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Apacer Technology 78.D1GMM.AU10B 16GB

Apacer Technology 78.D1GMM.AU10B 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Kingston ACR32D4S2S8ME-16 16GB

Kingston ACR32D4S2S8ME-16 16GB

G Skill Intl F3-1600C9-4GAO 4GB

G Skill Intl F3-1600C9-4GAO 4GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB