Samsung M471B5173QH0-YK0 4GB vs Nanya Technology NT4GC64B8HG0NS-DI 4GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Nanya Technology NT4GC64B8HG0NS-DI 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Nanya Technology NT4GC64B8HG0NS-DI 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-DI 4GB

报告一个错误

更快的读取速度，GB/s

13 12.3

测试中的平均数值
更快的写入速度，GB/s

9.0 8.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

45 45
读取速度，GB/s

12.3 13.0
写入速度，GB/s

8.0 9.0
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1992 2079

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA81GU7AFR8N-UH 8GB

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Kingston KHX3200C18D4/16G 16GB

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Kingston 9905471-002.A00LF 2GB

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G Skill Intl F4-3600C14-8GTRGB 8GB

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Kllisre DDR4-8GB 8GB

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Apacer Technology GD2.0918CT.001 4GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB