Samsung M471B5273CH0-CH9 4GB vs Crucial Technology BLS16G4D240FSB.16FBD 16GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Crucial Technology BLS16G4D240FSB.16FBD 16GB

需要考虑的原因
Crucial Technology BLS16G4D240FSB.16FBD 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 48

左右 -55% 更低的延时
更快的读取速度，GB/s

15.9 8.9

测试中的平均数值
更快的写入速度，GB/s

9.8 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 31
读取速度，GB/s

8.9 15.9
写入速度，GB/s

5.9 9.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1420 2881

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

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Crucial Technology BLS8G4D30AESBK.M8FE 8GB

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A-DATA Technology DQVE1908 512MB

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Crucial Technology BLS16G4D30AESC.M16FE 16GB

Corsair CMZ16GX3M2A2400C10 8GB

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Corsair CM4X16GE2133C15S2 16GB

Nanya Technology M2Y51264TU88A2B-3C 512MB

Nanya Technology M2Y51264TU88A2B-3C 512MB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

Kingston 9965516-112.A00LF 16GB

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Crucial Technology BLS16G4S26BFSD.16FBD 16GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMD128GX4M8A2400C14 16GB

Corsair CMD128GX4M8A2400C14 16GB