Samsung M471B5273CH0-CH9 4GB vs G Skill Intl F3-1600C9-4GRSL 4GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

G Skill Intl F3-1600C9-4GRSL 4GB

G Skill Intl F3-1600C9-4GRSL 4GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

G Skill Intl F3-1600C9-4GRSL 4GB

需要考虑的原因
G Skill Intl F3-1600C9-4GRSL 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 48

左右 -85% 更低的延时
更快的读取速度，GB/s

12.9 8.9

测试中的平均数值
更快的写入速度，GB/s

8.6 5.9

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F3-1600C9-4GRSL 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

48 26
读取速度，GB/s

8.9 12.9
写入速度，GB/s

5.9 8.6
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1420 2128

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2400C15-8GVB 8GB

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Samsung M471B5273CH0-CH9 4GB

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G Skill Intl F3-1600C9-4GRSL 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

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A-DATA Technology AM1P24HC8T1-BBJS 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMW16GX4M2C3200C16 8GB

Corsair CMW16GX4M2C3200C16 8GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Kllisre DDR4-8GB 8GB

Kllisre DDR4-8GB 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-2800C14-16GVK 16GB

G Skill Intl F4-2800C14-16GVK 16GB