Samsung M471B5273CH0-CH9 4GB vs G Skill Intl F4-3600C14-16GVK 16GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

G Skill Intl F4-3600C14-16GVK 16GB

G Skill Intl F4-3600C14-16GVK 16GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

G Skill Intl F4-3600C14-16GVK 16GB

需要考虑的原因
G Skill Intl F4-3600C14-16GVK 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 48

左右 -100% 更低的延时
更快的读取速度，GB/s

21.7 8.9

测试中的平均数值
更快的写入速度，GB/s

19.2 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-3600C14-16GVK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 24
读取速度，GB/s

8.9 21.7
写入速度，GB/s

5.9 19.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1420 4349

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KP4T2F-PSB 4GB

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Kingston 9905702-014.A00G 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Chun Well Technology Holding Limited D4U1636181DC 16GB

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Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

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Crucial Technology BLS16G4D30AESE.M16FE 16GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

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Corsair CMR16GX4M2F4000C19 8GB

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SpecTek Incorporated ?????????????????? 2GB

Samsung M471A5244BB0-CRC 4GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMD64GX4M8X3800C19 8GB

Corsair CMD64GX4M8X3800C19 8GB