Samsung M471B5273CH0-CH9 4GB vs G Skill Intl F4-3866C18-8GTZKW 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

G Skill Intl F4-3866C18-8GTZKW 8GB

G Skill Intl F4-3866C18-8GTZKW 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

G Skill Intl F4-3866C18-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-3866C18-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 48

左右 -167% 更低的延时
更快的读取速度，GB/s

20.9 8.9

测试中的平均数值
更快的写入速度，GB/s

16.7 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-3866C18-8GTZKW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 18
读取速度，GB/s

8.9 20.9
写入速度，GB/s

5.9 16.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1420 3609

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5584-017.A00LF 4GB

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Corsair CMR64GX4M4C3200C16 16GB

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Corsair CMD64GX4M8A2800C16 8GB

Corsair CMD64GX4M8A2800C16 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

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G Skill Intl F3-17000CL11-4GBXL 4GB

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A-DATA Technology DDR4 3200 2OZ 4GB

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A-DATA Technology AM2P24HC8T1-BBFS 8GB