Samsung M471B5273CH0-CH9 4GB vs Kingston HP32D4U2S8MR-8 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Kingston HP32D4U2S8MR-8 8GB

Kingston HP32D4U2S8MR-8 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Kingston HP32D4U2S8MR-8 8GB

需要考虑的原因
Kingston HP32D4U2S8MR-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 48

左右 -30% 更低的延时
更快的读取速度，GB/s

20.3 8.9

测试中的平均数值
更快的写入速度，GB/s

14.6 5.9

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Kingston HP32D4U2S8MR-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 37
读取速度，GB/s

8.9 20.3
写入速度，GB/s

5.9 14.6
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1420 3235

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK32GX4M2Z4000C18 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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SK Hynix HMA82GU6DJR8N-XN 16GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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SK Hynix HMA82GU6DJR8N-VK 16GB

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Golden Empire CL14-14-14 D4-2400 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

Samsung M386B4G70DM0-CMA4 32GB

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G Skill Intl F4-2400C17-4GFT 4GB

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Kingston 99U5403-465.A00LF 8GB

G Skill Intl F4-3800C14-8GTZN 8GB

G Skill Intl F4-3800C14-8GTZN 8GB