Samsung M471B5273CH0-CH9 4GB vs OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

需要考虑的原因
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

报告一个错误

低于PassMark测试中的延时，ns

39 48

左右 -23% 更低的延时
更快的读取速度，GB/s

15.1 8.9

测试中的平均数值
更快的写入速度，GB/s

12.6 5.9

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 39
读取速度，GB/s

8.9 15.1
写入速度，GB/s

5.9 12.6
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1420 3000

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9965525-054.A00LF 4GB

Kingston 9965525-054.A00LF 4GB

AMD R334G1339U2S 4GB

AMD R334G1339U2S 4GB

G Skill Intl F4-4500C19-8GTZKKE 8GB

G Skill Intl F4-4500C19-8GTZKKE 8GB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N

Kingston KF3200C16D4/8GX 8GB

Kingston KF3200C16D4/8GX 8GB

Kingston KHX2666C16/8G 8GB

Kingston KHX2666C16/8G 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Crucial Technology BLS8G4D240FSB.16FBR2 8GB

Crucial Technology BLS8G4D240FSB.16FBR2 8GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HMA41GR7MFR8N-TFT1 8GB

SK Hynix HMA41GR7MFR8N-TFT1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905624-004.A00G 4GB

Kingston 9905624-004.A00G 4GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

V-Color Technology Inc. TD416G26D819-VC 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB