Samsung M471B5273CH0-CH9 4GB vs Samsung M471A1K1KCB1-CRC 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Samsung M471A1K1KCB1-CRC 8GB

Samsung M471A1K1KCB1-CRC 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Samsung M471A1K1KCB1-CRC 8GB

需要考虑的原因
Samsung M471A1K1KCB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 48

左右 -109% 更低的延时
更快的读取速度，GB/s

14.3 8.9

测试中的平均数值
更快的写入速度，GB/s

7.0 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Samsung M471A1K1KCB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 23
读取速度，GB/s

8.9 14.3
写入速度，GB/s

5.9 7.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1420 2103

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471A1K1KCB1-CRC 8GB

Samsung M471A1K1KCB1-CRC 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT32G4SFD832A.C16FB 32GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Mushkin 99[2/7/4]199[F/T] 8GB

Mushkin 99[2/7/4]199[F/T] 8GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Mushkin MR[ABC]4U320GJJM16G 16GB

Mushkin MR[ABC]4U320GJJM16G 16GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Team Group Inc. TEAMGROUP-SD4-2400 16GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Apacer Technology 78.CAGMR.40C0B 8GB

Apacer Technology 78.CAGMR.40C0B 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Golden Empire CL16-18-18 D4-3400 4GB

Golden Empire CL16-18-18 D4-3400 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

V-Color Technology Inc. TL48G32S8KGRGB16 8GB

V-Color Technology Inc. TL48G32S8KGRGB16 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Corsair CMK16GX4M2A2400C14 8GB

Corsair CMK16GX4M2A2400C14 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Corsair CMK32GX4M2E3200C16 16GB

Corsair CMK32GX4M2E3200C16 16GB