Samsung M471B5273CH0-CH9 4GB vs Samsung M471A5143DB0-CPB 4GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Samsung M471A5143DB0-CPB 4GB

Samsung M471A5143DB0-CPB 4GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Samsung M471A5143DB0-CPB 4GB

需要考虑的原因
Samsung M471A5143DB0-CPB 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 48

左右 -23% 更低的延时
更快的读取速度，GB/s

14.1 8.9

测试中的平均数值
更快的写入速度，GB/s

10.7 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Samsung M471A5143DB0-CPB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 39
读取速度，GB/s

8.9 14.1
写入速度，GB/s

5.9 10.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1420 2183

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905599-025.A00G 8GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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Kingston 2GB-DDR2 800Mhz 2GB

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SK Hynix HMA81GU7AFR8N-UH 8GB

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Kingston KHX1600C9D3/4G 4GB

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Team Group Inc. TEAMGROUP-SD4-2666 16GB

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PNY Electronics PNY 2GB

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Micron Technology 36ASF4G72PZ-2G1B1 32GB

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Corsair CMD16GX4M4B2400C10 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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AMD R534G1601U1S-UO 4GB

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Corsair CMSX4GX3M1A1600C9 4GB

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Apacer Technology 78.D1GMM.AU10B 16GB

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Kingston 9965433-034.A00LF 4GB

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Kingston 9905701-021.A00G 16GB

Kingston 9905701-021.A00G 16GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

Kllisre M378A1K43BB2-CRC 8GB

Kllisre M378A1K43BB2-CRC 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Avant Technology J641GU42J9266ND 8GB

Avant Technology J641GU42J9266ND 8GB