Samsung M471B5273CH0-CH9 4GB vs SK Hynix HMT425S6AFR6A-PB 2GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

SK Hynix HMT425S6AFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6AFR6A-PB 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 48

左右 -71% 更低的延时
更快的读取速度，GB/s

12.6 8.9

测试中的平均数值
更快的写入速度，GB/s

8.2 5.9

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

SK Hynix HMT425S6AFR6A-PB 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

48 28
读取速度，GB/s

8.9 12.6
写入速度，GB/s

5.9 8.2
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1420 1822

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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