Samsung M471B5273DH0-CH9 4GB vs G Skill Intl F4-3466C16-8GTZ 8GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

G Skill Intl F4-3466C16-8GTZ 8GB

G Skill Intl F4-3466C16-8GTZ 8GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

G Skill Intl F4-3466C16-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3466C16-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 47

左右 -135% 更低的延时
更快的读取速度，GB/s

19.2 9.3

测试中的平均数值
更快的写入速度，GB/s

15.3 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

G Skill Intl F4-3466C16-8GTZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 20
读取速度，GB/s

9.3 19.2
写入速度，GB/s

5.9 15.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1413 3429

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL16G26C16U4B.16FD 16GB

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Samsung M471B5173QH0-YK0 4GB

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Crucial Technology CT16G4DFRA266.M16FR 16GB

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Samsung M471B5273DH0-CH9 4GB

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ASint Technology SSA302G08-EGN1C 4GB

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PUSKILL PJ8TFK1GM8 8GB

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Corsair CMD16GX4M2B3600C18 8GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Micron Technology 16ATF2G64AZ-2G3B1 16GB

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A-DATA Technology DDR3 1600 4GB

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Smart Modular SF4641G8CK8IEGKSBG 8GB

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Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

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Corsair CMSX8GX4M2A2666C18 4GB

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Kingston 9965525-155.A00LF 8GB

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Kingston XVTW4H-MIE 32GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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