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Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT16G4DFD8213.M16FA 16GB

Samsung M471B5273EB0-CK0 4GB vs Crucial Technology CT16G4DFD8213.M16FA 16GB

总分
star star star star star
Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分
star star star star star
Crucial Technology CT16G4DFD8213.M16FA 16GB

Crucial Technology CT16G4DFD8213.M16FA 16GB

差异 规格 评论

差异

Samsung M471B5273EB0-CK0 4GB 需要考虑的原因
Samsung M471B5273EB0-CK0 4GB
报告一个错误
Crucial Technology CT16G4DFD8213.M16FA 16GB 需要考虑的原因
Crucial Technology CT16G4DFD8213.M16FA 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 40
    左右 -60% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 8.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT16G4DFD8213.M16FA 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 25
  • 读取速度，GB/s
    12.3 left arrow 16.2
  • 写入速度，GB/s
    8.9 left arrow 11.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1789 left arrow 2847

Samsung M471B5273EB0-CK0 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB

Crucial Technology CT16G4DFD8213.M16FA 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Heoriady M471A1K43CB1-CTD 8GB
Heoriady M471A1K43CB1-CTD 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMW32GX4M4C3466C16 8GB
Corsair CMW32GX4M4C3466C16 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3200C14-8GTZ 8GB
G Skill Intl F4-3200C14-8GTZ 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT16G4DFD8213.M16FA 16GB
Crucial Technology CT16G4DFD8213.M16FA 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston ACR32D4S2S8ME-16 16GB
Kingston ACR32D4S2S8ME-16 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
SK Hynix HMA41GS6AFR8N-TF 8GB
SK Hynix HMA41GS6AFR8N-TF 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
V-GEN D4H8GL26A8TS6 8GB
V-GEN D4H8GL26A8TS6 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Transcend Information JM3200HLB-16G 16GB
Transcend Information JM3200HLB-16G 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Kingston K1CXP8-MIE 16GB
Kingston K1CXP8-MIE 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingston 9905700-047.A00G 16GB
Kingston 9905700-047.A00G 16GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
Corsair CM4X16GE2133C15S2 16GB
Corsair CM4X16GE2133C15S2 16GB
内存RAM