Samsung M471B5673FH0-CF8 2GB vs Heoriady M471A1K43CB1-CTD 8GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Heoriady M471A1K43CB1-CTD 8GB

Heoriady M471A1K43CB1-CTD 8GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 51

左右 41% 更低的延时
更快的读取速度，GB/s

10.6 10.5

测试中的平均数值
更快的写入速度，GB/s

6.8 5.5

测试中的平均数值

Heoriady M471A1K43CB1-CTD 8GB

需要考虑的原因
Heoriady M471A1K43CB1-CTD 8GB

报告一个错误

更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Heoriady M471A1K43CB1-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 51
读取速度，GB/s

10.6 10.5
写入速度，GB/s

6.8 5.5
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1479 1941

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston ACR32D4S2S8ME-16 16GB

Kingston ACR32D4S2S8ME-16 16GB

Crucial Technology CT51264BA1339.C16F 4GB

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G Skill Intl F4-3600C18-16GTZN 16GB

Samsung M3 78T5663RZ3-CF7 2GB

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Asgard VMA45UG-MIC1U22T2 8GB

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