Samsung M471B5273EB0-CK0 4GB vs Transcend Information TS2GSH64V4B 16GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Transcend Information TS2GSH64V4B 16GB

Transcend Information TS2GSH64V4B 16GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Transcend Information TS2GSH64V4B 16GB

需要考虑的原因
Transcend Information TS2GSH64V4B 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 40

左右 -60% 更低的延时
更快的读取速度，GB/s

15.3 12.3

测试中的平均数值
更快的写入速度，GB/s

11.4 8.9

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Transcend Information TS2GSH64V4B 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 25
读取速度，GB/s

12.3 15.3
写入速度，GB/s

8.9 11.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1789 2681

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR26D4U9D8MH-16 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Samsung M378B5773DH0-CH9 2GB

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Kingston 9965516-430.A00G 16GB

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Corsair CMD64GX4M4C3000C15 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

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Kingston 99U5403-036.A00G 4GB

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V-Color Technology Inc. TD8G16C16-UHK 8GB

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Corsair CML16GX3M2A1600C10 8GB

Kllisre HMA81GU6AFR8N-VK 8GB

Kllisre HMA81GU6AFR8N-VK 8GB