Samsung M471B5673FH0-CH9 2GB vs Nanya Technology NT2GC64B88B0NS-CG 2GB

总分

Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

总分

Nanya Technology NT2GC64B88B0NS-CG 2GB

Nanya Technology NT2GC64B88B0NS-CG 2GB

差异规格评论

差异

Samsung M471B5673FH0-CH9 2GB

需要考虑的原因
Samsung M471B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 43

左右 5% 更低的延时
更快的写入速度，GB/s

8.2 7.3

测试中的平均数值

Nanya Technology NT2GC64B88B0NS-CG 2GB

需要考虑的原因
Nanya Technology NT2GC64B88B0NS-CG 2GB

报告一个错误

规格

完整的技术规格清单

Samsung M471B5673FH0-CH9 2GB

Nanya Technology NT2GC64B88B0NS-CG 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

41 43
读取速度，GB/s

11.1 11.1
写入速度，GB/s

8.2 7.3
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1348 1357

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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