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Samsung M471B5773DH0-CK0 2GB
A-DATA Technology DDR4 3000 2OZ 8GB

Samsung M471B5773DH0-CK0 2GB vs A-DATA Technology DDR4 3000 2OZ 8GB

总分
star star star star star
Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

总分
star star star star star
A-DATA Technology DDR4 3000 2OZ 8GB

A-DATA Technology DDR4 3000 2OZ 8GB

差异 规格 评论

差异

Samsung M471B5773DH0-CK0 2GB 需要考虑的原因
Samsung M471B5773DH0-CK0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 32
    左右 16% 更低的延时
A-DATA Technology DDR4 3000 2OZ 8GB 需要考虑的原因
A-DATA Technology DDR4 3000 2OZ 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.9 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5773DH0-CK0 2GB
A-DATA Technology DDR4 3000 2OZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 32
  • 读取速度，GB/s
    12.2 left arrow 16.9
  • 写入速度，GB/s
    7.8 left arrow 13.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1763 left arrow 3196

Samsung M471B5773DH0-CK0 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB

A-DATA Technology DDR4 3000 2OZ 8GB RAM的比较

A-DATA Technology AD4S3200316G22-BHYD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AD5U48008G-B 8GB
A-DATA Technology AD5U48008G-B 8GB
A-DATA Technology DDR4 2133 2OZ 8GB
A-DATA Technology DDR4 2133 2OZ 8GB
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Corsair CMT32GX4M2C3200C16 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3200C15-8GTZSK 8GB
G Skill Intl F4-3200C15-8GTZSK 8GB
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Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
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Crucial Technology BLS8G4D26BFSC.16FD2 8GB
内存RAM
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G Skill Intl F3-10600CL9-2GBNT 2GB
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Micron Technology 36ASF2G72PZ-2G1B1 16GB
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Kingston KVR16N11/8-SP 8GB
Transcend Information JM2666HLG-16GK 8GB
Transcend Information JM2666HLG-16GK 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
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Crucial Technology CB16GS2666.C8ET 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3400C16-8GTZKW 8GB
G Skill Intl F4-3400C16-8GTZKW 8GB
内存RAM
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Nanya Technology M2Y51264TU88B0B-3C 512MB
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Essencore Limited IM48GU88A30-FGGHMB 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-3000C16-8GSXWB 8GB
G Skill Intl F4-3000C16-8GSXWB 8GB
内存RAM
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Ramos Technology EWB8GB681CA3-16IC 8GB
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Corsair CMT64GX4M4C3466C16 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
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Micron Technology 4ATF51264AZ-2G3B1 4GB
内存RAM