Samsung M471B5773DH0-CK0 2GB vs G Skill Intl F4-2400C15-4GVR 4GB

总分

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

总分

G Skill Intl F4-2400C15-4GVR 4GB

G Skill Intl F4-2400C15-4GVR 4GB

差异规格评论

差异

Samsung M471B5773DH0-CK0 2GB

需要考虑的原因
Samsung M471B5773DH0-CK0 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

G Skill Intl F4-2400C15-4GVR 4GB

需要考虑的原因
G Skill Intl F4-2400C15-4GVR 4GB

报告一个错误

更快的读取速度，GB/s

16.1 12.2

测试中的平均数值
更快的写入速度，GB/s

11.7 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5773DH0-CK0 2GB

G Skill Intl F4-2400C15-4GVR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

12.2 16.1
写入速度，GB/s

7.8 11.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1763 2702

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5773DH0-CK0 2GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Chun Well Technology Holding Limited MD4U1636181DCW 16G

Kingston 99U5429-007.A00LF 2GB

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Micron Technology 9ASF1G72PZ-2G6D1 8GB

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