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SK Hynix DDR2 800 2G 2GB
A-DATA Technology AM1P26KCST2-BABS 16GB

SK Hynix DDR2 800 2G 2GB vs A-DATA Technology AM1P26KCST2-BABS 16GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
A-DATA Technology AM1P26KCST2-BABS 16GB

A-DATA Technology AM1P26KCST2-BABS 16GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.5
    测试中的平均数值
A-DATA Technology AM1P26KCST2-BABS 16GB 需要考虑的原因
A-DATA Technology AM1P26KCST2-BABS 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 77
    左右 -88% 更低的延时
  • 更快的写入速度，GB/s
    14.1 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
A-DATA Technology AM1P26KCST2-BABS 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 41
  • 读取速度，GB/s
    2,936.9 left arrow 15.5
  • 写入速度，GB/s
    1,884.0 left arrow 14.1
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    564 left arrow 3006

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

A-DATA Technology AM1P26KCST2-BABS 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905633-017.A00G 8GB
Kingston 9905633-017.A00G 8GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
G Skill Intl F4-3600C16-8GTZSW 8GB
G Skill Intl F4-3600C16-8GTZSW 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
A-DATA Technology AM1P26KCST2-BABS 16GB
A-DATA Technology AM1P26KCST2-BABS 16GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F4-3333C16-16GTZSK 16GB
G Skill Intl F4-3333C16-16GTZSK 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Corsair CMK64GX4M4B3600C18 16GB
Corsair CMK64GX4M4B3600C18 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Kllisre 0000 8GB
Kllisre 0000 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A1K43BB1-CTD 8GB
Samsung M471A1K43BB1-CTD 8GB
内存RAM