SK Hynix DDR2 800 2G 2GB vs Samsung M378T5663QZ3-CF7 2GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的写入速度，GB/s

1,884.0 1,813.5

测试中的平均数值

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

56 77

左右 -38% 更低的延时
更快的读取速度，GB/s

4 2

测试中的平均数值

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Samsung M378T5663QZ3-CF7 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

77 56
读取速度，GB/s

2,936.9 4,387.7
写入速度，GB/s

1,884.0 1,813.5
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

564 693

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX3M2A1866C9 8GB

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G Skill Intl F4-2133C15-8GIS 8GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

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A-DATA Technology DDR4 2400 16GB

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A-DATA Technology DQVE1908 512MB

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G Skill Intl F4-3200C14-8GTZR 8GB