SK Hynix DDR2 800 2G 2GB vs A-DATA Technology AM2P26KC8T1-BXRS 8GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

A-DATA Technology AM2P26KC8T1-BXRS 8GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 14.9

测试中的平均数值

A-DATA Technology AM2P26KC8T1-BXRS 8GB

需要考虑的原因
A-DATA Technology AM2P26KC8T1-BXRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 77

左右 -166% 更低的延时
更快的写入速度，GB/s

10.7 1,884.0

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 29
读取速度，GB/s

2,936.9 14.9
写入速度，GB/s

1,884.0 10.7
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

564 2811

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5403-036.A00G 4GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Corsair CMD16GX4M4B3200C16-R 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Corsair CMD16GX4M4B3300C16 4GB

Corsair CMD16GX4M4B3300C16 4GB

Kingston SNY1600S11-4G-EDEG 4GB

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Kingston K000MD44U 4GB

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SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB