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SK Hynix DDR2 800 2G 2GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

SK Hynix DDR2 800 2G 2GB vs Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.3
    测试中的平均数值
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 77
    左右 -221% 更低的延时
  • 更快的写入速度，GB/s
    11.5 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 24
  • 读取速度，GB/s
    2,936.9 left arrow 15.3
  • 写入速度，GB/s
    1,884.0 left arrow 11.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    564 left arrow 2744

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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A-DATA Technology ADOVE1A0834E 1GB
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Kingmax Semiconductor FLFE85F-C8KL9 2GB
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Samsung M3 78T3354BZ0-CCC 256MB
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G Skill Intl F4-5333C22-8GTRG 8GB
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内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
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Kingston 9905702-010.A00G 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
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Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
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