SK Hynix DDR2 800 2G 2GB vs Crucial Technology CT8G4SFD8213.C16FHP 8GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Crucial Technology CT8G4SFD8213.C16FHP 8GB

Crucial Technology CT8G4SFD8213.C16FHP 8GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 12.8

测试中的平均数值

Crucial Technology CT8G4SFD8213.C16FHP 8GB

需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FHP 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 77

左右 -97% 更低的延时
更快的写入速度，GB/s

10.6 1,884.0

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Crucial Technology CT8G4SFD8213.C16FHP 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 39
读取速度，GB/s

2,936.9 12.8
写入速度，GB/s

1,884.0 10.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

564 2423

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSX32GX4M2A3200C22 16GB

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AMD AE34G1601U1 4GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Kingston 9965669-018.A00G 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Samsung M471A5143DB0-CPB 4GB

Samsung M471A5143DB0-CPB 4GB

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Kingston 99U5403-036.A00G 4GB

Kingston 9905712-008.A00G 16GB

Kingston 9905712-008.A00G 16GB