SK Hynix DDR2 800 2G 2GB vs Mushkin MR[ABC]4U266GHHF8G 8GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Mushkin MR[ABC]4U266GHHF8G 8GB

Mushkin MR[ABC]4U266GHHF8G 8GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 17

测试中的平均数值

Mushkin MR[ABC]4U266GHHF8G 8GB

需要考虑的原因
Mushkin MR[ABC]4U266GHHF8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 77

左右 -141% 更低的延时
更快的写入速度，GB/s

12.2 1,884.0

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Mushkin MR[ABC]4U266GHHF8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 32
读取速度，GB/s

2,936.9 17.0
写入速度，GB/s

1,884.0 12.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

564 2958

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64HZ-2G6E3 16GB

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Samsung M471B5173DB0-YK0 4GB

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Kingston 9965667-001.A00G 16GB

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A-DATA Technology DDR4 3200 8GB

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G Skill Intl F4-3733C17-4GVK 4GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Apacer Technology 78.CAGP7.40C0B 8GB