SK Hynix HMT31GR7CFR4C-PB 8GB vs Crucial Technology BLT4G4D26AFTA.8FADG 4GB

总分

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

总分

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

差异规格评论

差异

SK Hynix HMT31GR7CFR4C-PB 8GB

需要考虑的原因
SK Hynix HMT31GR7CFR4C-PB 8GB

报告一个错误

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

需要考虑的原因
Crucial Technology BLT4G4D26AFTA.8FADG 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 51

左右 -122% 更低的延时
更快的读取速度，GB/s

16.5 9.8

测试中的平均数值
更快的写入速度，GB/s

12.6 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT31GR7CFR4C-PB 8GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 23
读取速度，GB/s

9.8 16.5
写入速度，GB/s

8.2 12.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2182 2755

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

Corsair CMH128GX4M4E3200C16 32GB

Corsair CMH128GX4M4E3200C16 32GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Hewlett-Packard 7EH98AA#ABB 8GB

Hewlett-Packard 7EH98AA#ABB 8GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Crucial Technology BL8G30C15U4R.M8FE1 8GB

Crucial Technology BL8G30C15U4R.M8FE1 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Corsair CMK64GX4M4B3000C15 16GB

Corsair CMK64GX4M4B3000C15 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Aquarius Production Company LLC 16G-D4-2666-MR 4GB

Aquarius Production Company LLC 16G-D4-2666-MR 4GB

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. IR2133D464L15S/8G 8GB

Wilk Elektronik S.A. IR2133D464L15S/8G 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMK8GX4M2B3866C18 4GB

Corsair CMK8GX4M2B3866C18 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Avant Technology W6451U66J9266ND 4GB

Avant Technology W6451U66J9266ND 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Transcend Information AQD-D4U4GN21-SG 4GB

Transcend Information AQD-D4U4GN21-SG 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

SK Hynix HMAA4GS6MJR8N-VK 32GB

SK Hynix HMAA4GS6MJR8N-VK 32GB