SK Hynix HMT325S6BFR8C-H9 2GB vs Golden Empire CL15-17-17 D4-2666 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Golden Empire CL15-17-17 D4-2666 8GB

Golden Empire CL15-17-17 D4-2666 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

Golden Empire CL15-17-17 D4-2666 8GB

需要考虑的原因
Golden Empire CL15-17-17 D4-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 41

左右 -95% 更低的延时
更快的读取速度，GB/s

18.1 11.6

测试中的平均数值
更快的写入速度，GB/s

14.8 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Golden Empire CL15-17-17 D4-2666 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 21
读取速度，GB/s

11.6 18.1
写入速度，GB/s

7.3 14.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1438 3087

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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King Tiger Technology TMKG8G3000C17(XMP) 8GB

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AMD R538G1601U2S-UO 8GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Ramaxel Technology RMSA3300ME78HBF-2666 16GB

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Samsung M378A1K43EB2-CWE 8GB

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Corsair CMK16GX4M4A2666C16 4GB

Corsair CMK16GX4M4A2666C16 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4133C19-8GTZA 8GB

G Skill Intl F4-4133C19-8GTZA 8GB

Kingston HX318C10FK/4 4GB

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Corsair CM4X8GD3000C15K4 8GB

Corsair CM4X8GD3000C15K4 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

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Samsung M471A1K43CB1-CTD 8GB