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SK Hynix HMT325S6CFR8C-PB 2GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

SK Hynix HMT325S6CFR8C-PB 2GB vs GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

总分
star star star star star
SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分
star star star star star
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

差异 规格 评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB
报告一个错误
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB 需要考虑的原因
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 38
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 6.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6CFR8C-PB 2GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 30
  • 读取速度，GB/s
    10.9 left arrow 16.8
  • 写入速度，GB/s
    6.6 left arrow 13.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1406 left arrow 3258

SK Hynix HMT325S6CFR8C-PB 2GB RAM的比较

Samsung M471B5773DH0-CK0 2GB
SK Hynix HMT451S6MFR8C-PB 4GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
Corsair CMK64GX4M4B3466C16 16GB
Corsair CMK64GX4M4B3466C16 16GB
内存RAM
Kingston ACR16D3LS1KBG/8G 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Kingston 9905701-017.A00G 16GB
Kingston 9905701-017.A00G 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CM4X16GD3200C16K4E 16GB
Corsair CM4X16GD3200C16K4E 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Apacer Technology 78.C2GF2.AU00B 8GB
Apacer Technology 78.C2GF2.AU00B 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston CBD26D4U9S8ME-8 8GB
Kingston CBD26D4U9S8ME-8 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-2400C16-16GRS 16GB
G Skill Intl F4-2400C16-16GRS 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Transcend Information TS2GSH64V6B 16GB
Transcend Information TS2GSH64V6B 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-4000C18-32GTZN 32GB
G Skill Intl F4-4000C18-32GTZN 32GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
内存RAM