SK Hynix HMT325S6CFR8C-PB 2GB vs Samsung M471B5773DH0-CK0 2GB

总分

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB

报告一个错误

Samsung M471B5773DH0-CK0 2GB

需要考虑的原因
Samsung M471B5773DH0-CK0 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 -41% 更低的延时
更快的读取速度，GB/s

12.2 10.9

测试中的平均数值
更快的写入速度，GB/s

7.8 6.6

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-PB 2GB

Samsung M471B5773DH0-CK0 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

38 27
读取速度，GB/s

10.9 12.2
写入速度，GB/s

6.6 7.8
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1406 1763

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Micron Technology 16G2666CL19 16GB

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AMD AE34G1601U1 4GB

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Corsair CMSX8GX4M2A2666C18 4GB

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