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SK Hynix HMT325S6CFR8C-PB 2GB
Kingmax Semiconductor GSLG42F-18---------- 8GB

SK Hynix HMT325S6CFR8C-PB 2GB vs Kingmax Semiconductor GSLG42F-18---------- 8GB

总分
star star star star star
SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分
star star star star star
Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

差异 规格 评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 99
    左右 62% 更低的延时
Kingmax Semiconductor GSLG42F-18---------- 8GB 需要考虑的原因
Kingmax Semiconductor GSLG42F-18---------- 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.2 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.9 left arrow 6.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6CFR8C-PB 2GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 99
  • 读取速度，GB/s
    10.9 left arrow 14.2
  • 写入速度，GB/s
    6.6 left arrow 6.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1406 left arrow 1499

SK Hynix HMT325S6CFR8C-PB 2GB RAM的比较

Samsung M471B5773DH0-CK0 2GB
SK Hynix HMT451S6MFR8C-PB 4GB

Kingmax Semiconductor GSLG42F-18---------- 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9905625-011.A00G 8GB
Kingston 9905625-011.A00G 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Corsair CM4X8GE3000C15K4 8GB
Corsair CM4X8GE3000C15K4 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Kingston KHX2400C12D4/8GX 8GB
Kingston KHX2400C12D4/8GX 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-4266C16-8GTZR 8GB
G Skill Intl F4-4266C16-8GTZR 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston XJ69DF-MIE 8GB
Kingston XJ69DF-MIE 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Avant Technology J644GU44J1293NF 32GB
Avant Technology J644GU44J1293NF 32GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3200C14-16GFX 16GB
G Skill Intl F4-3200C14-16GFX 16GB
内存RAM