SK Hynix HMT325S6CFR8C-PB 2GB vs Samsung M393A2G40DB1-CRC 16GB

总分

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分

Samsung M393A2G40DB1-CRC 16GB

Samsung M393A2G40DB1-CRC 16GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB

报告一个错误

低于PassMark测试中的延时，ns

38 81

左右 53% 更低的延时
更快的读取速度，GB/s

10.9 8.5

测试中的平均数值
更快的写入速度，GB/s

6.6 5.6

测试中的平均数值

Samsung M393A2G40DB1-CRC 16GB

需要考虑的原因
Samsung M393A2G40DB1-CRC 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-PB 2GB

Samsung M393A2G40DB1-CRC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 81
读取速度，GB/s

10.9 8.5
写入速度，GB/s

6.6 5.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1406 1651

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2800C16-4GRR 4GB

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G Skill Intl F3-1866C8-8GTX 8GB

Corsair CM4B8G1L2666A18S4 8GB

Corsair CM4B8G1L2666A18S4 8GB

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G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

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Micron Technology 16ATF4G64AZ-3G2B1 32GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-3600C18-16GTRG 16GB

G Skill Intl F4-3600C18-16GTRG 16GB