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SK Hynix HMT325S6CFR8C-PB 2GB
Samsung V-GeN D4S8GL32A8TL 8GB

SK Hynix HMT325S6CFR8C-PB 2GB vs Samsung V-GeN D4S8GL32A8TL 8GB

总分
star star star star star
SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分
star star star star star
Samsung V-GeN D4S8GL32A8TL 8GB

Samsung V-GeN D4S8GL32A8TL 8GB

差异 规格 评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 64
    左右 41% 更低的延时
Samsung V-GeN D4S8GL32A8TL 8GB 需要考虑的原因
Samsung V-GeN D4S8GL32A8TL 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 6.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6CFR8C-PB 2GB
Samsung V-GeN D4S8GL32A8TL 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 64
  • 读取速度，GB/s
    10.9 left arrow 16.8
  • 写入速度，GB/s
    6.6 left arrow 8.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1406 left arrow 2052

SK Hynix HMT325S6CFR8C-PB 2GB RAM的比较

Samsung M471B5773DH0-CK0 2GB
SK Hynix HMT451S6MFR8C-PB 4GB

Samsung V-GeN D4S8GL32A8TL 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Samsung V-GeN D4S8GL32A8TL 8GB
Samsung V-GeN D4S8GL32A8TL 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-2400C15-8GVR 8GB
G Skill Intl F4-2400C15-8GVR 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK32GX4M4D3000C16 8GB
Corsair CMK32GX4M4D3000C16 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Samsung M393A5143DB0-CPB 4GB
Samsung M393A5143DB0-CPB 4GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Corsair CMD128GX4M8B3000C16 16GB
Corsair CMD128GX4M8B3000C16 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston XJ69DF-MIE2 8GB
Kingston XJ69DF-MIE2 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-3200C16-16GVS 16GB
G Skill Intl F4-3200C16-16GVS 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Wilk Elektronik S.A. GR2400S464L17S/8G 8GB
Wilk Elektronik S.A. GR2400S464L17S/8G 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3200C16-16GVKA 16GB
G Skill Intl F4-3200C16-16GVKA 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
内存RAM
EVGA 16G-D3-1600-MR 8GB
EVGA 16G-D3-1600-MR 8GB
EVGA 16G-D4-2666-MR 4GB
EVGA 16G-D4-2666-MR 4GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Kingston 9905701-029.A00G 16GB
Kingston 9905701-029.A00G 16GB
内存RAM