RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HMT425S6CFR6A-PB 2GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB

SK Hynix HMT425S6CFR6A-PB 2GB vs A-DATA Technology AO1E34RCSV1-BF1S 16GB

总分
star star star star star
SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分
star star star star star
A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

差异 规格 评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB 需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 57
    左右 28% 更低的延时
A-DATA Technology AO1E34RCSV1-BF1S 16GB 需要考虑的原因
A-DATA Technology AO1E34RCSV1-BF1S 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT425S6CFR6A-PB 2GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 57
  • 读取速度，GB/s
    10.1 left arrow 16.8
  • 写入速度，GB/s
    7.1 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1484 left arrow 2792

SK Hynix HMT425S6CFR6A-PB 2GB RAM的比较

Ramaxel Technology RMT3170MP68F9F1600 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F4G64CB8HG5N-CG 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Panram International Corporation PUD43000C164G2NJK 4GB
Panram International Corporation PUD43000C164G2NJK 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMU32GX4M2A2400C14 16GB
Corsair CMU32GX4M2A2400C14 16GB
内存RAM
Kingston HP32D4U8S8HC-8XR 8GB
Kingston HP32D4U8S8HC-8XR 8GB
Crucial Technology CB8GU2666.C8ET 8GB
Crucial Technology CB8GU2666.C8ET 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD48G213382 8GB
Patriot Memory (PDP Systems) PSD48G213382 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Samsung M47472K43DB1-CTD 16GB
Samsung M47472K43DB1-CTD 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston 9905702-012.A00G 8GB
Kingston 9905702-012.A00G 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Crucial Technology CT16G4SFD8266 16GB
Crucial Technology CT16G4SFD8266 16GB
内存RAM