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SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
比较
SK Hynix HMT425S6CFR6A-PB 2GB vs Crucial Technology CT16G4DFD8266.C16FE 16GB
总分
SK Hynix HMT425S6CFR6A-PB 2GB
总分
Crucial Technology CT16G4DFD8266.C16FE 16GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB
报告一个错误
需要考虑的原因
Crucial Technology CT16G4DFD8266.C16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
41
左右 -28% 更低的延时
更快的读取速度,GB/s
16.6
10.1
测试中的平均数值
更快的写入速度,GB/s
13.7
7.1
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
32
读取速度,GB/s
10.1
16.6
写入速度,GB/s
7.1
13.7
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1484
3357
SK Hynix HMT425S6CFR6A-PB 2GB RAM的比较
Ramaxel Technology RMT3170MP68F9F1600 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
Crucial Technology CT16G4DFD8266.C16FE 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1G70BH0-YK0 8GB
King Tiger Technology Tigo-X3-3200MHz-8G 8GB
Mushkin 991586 2GB
Golden Empire CL16-16-16 D4-2800 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMRX8GD3000C16R4D 8GB
Samsung M393B5170FH0-CK0 4GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
Apacer Technology 78.B1GET.AU00C 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Team Group Inc. UD5-6400 16GB
A-DATA Technology DDR4 3200 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-2666C18-16GRS 16GB
Kingston ACR256X64D3S1333C9 2GB
A-DATA Technology DDR4 3200 8GB
Crucial Technology CT51264BC1067.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3300C16-16GTZ 16GB
报告一个错误
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Bug description
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